الفهرس 
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Abstract
In the present work, we calculated the static dielectric constant of n-type doped semiconductors using some theoretical models. The nominated models were the quasi-universal percolation approach of Abboudy, Harrison approximation and Penn theory. The calculations were performed in the absence and presence of the magnetic field. The variations of the dielectric constant with the impurity concentration, the effective Bohr radius, and the magnetic field were demonstrated. Moreover, some dielectric constant-related phenomena such as the critical concentration (𝑁𝑐), the critical reduced Bohr radius (𝑎𝑐∗), and the critical magnetic field (𝐵𝑐), at which Insulator-Metal transition (IMT) occurs, were determined. A comparison between the calculated parameters using the above models and Mott’s criterion as well as Ishida and Otsuka prediction was carried out.