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Abstract The Direct Current Pulsed Plasma Magnetron Sputtering Technique (DCPMST) is used for depositing three different anti-reflection coating films with constant thickness 40 nm of metal oxides, namely TiO2, ZrO2 and TiO2/ZrO2onto three different types of silicon wafers (100) n-type doped with phosphors, p-type doped with born, p-n junction wafers and glass substrate. Furthermore, the Anti-Reflective properties of silicon nitride deposited elsewhere using Plasma Enhanced Chemical Vapor Deposition (PECVD) were compared with those of metal oxide films. |