الفهرس 
CHAPTER 1 : GENERAL INTRODUCTIONOnly 14 pages are availabe for public view
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Abstract
Zinc telluride films were successfully prepared by thermal evaporation with the substrate temperature(T ) kept s
at room temperature. This has been achieved using a modified
.
had strong <111> fibre texture, i.e.the highest condensed
The computational method, developed in this work, was successfully applied for the determination of the optical constants of the prepared zinc telluride films from their transmittance and reflectance versus \ . The accuracy of the
The structural, electrical and optical study of the thicker films, 920 DID, deposited at T = RT with deposition s
rate r = 0.5 nm/s lead to the following:
crystallite size = 465 nm with internal micorstrain = 4.49 x 103
2- The films were highly resistive, dark resistivety p at S-
room temperature = 3 x 10 ohm. em, and this was attributed to:
a. {nf 1 uence of free Te whi eh may exi s t in the films and originating from the source material, although the XRD investigation of such films showed no signs of free
temperature T = RT, maintained during deposition. s
temperatures, 295-475 k showed that p decreased markedly with measuring temperature T, rom 3xl06 to 3xl03 ohm.em, and this was attributed to the increase of the number of the
4- Analysis of p versus 1000lT curve revealed an activation energy value &E = 0.543 + 0.002 eV .
5- The refractive index n DROPed from 3.4 at ~ =400nm to 2.9 at A = 1300 followed by a slow decrease till A = 3000 nm.