الفهرس 
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Abstract
HEMT plays an important role in the high volume data processing, real time signal processing, imaging and graphics for military, commercial, and industrial applications. Many computational, analytical, and experimental analyses had been carried out to determine its main parameters. However, the computational studying of HEMT is time consuming, costly, and can not help in determining its physical parameters. Also, the experimental study is based on trials and recording of differences among these trials. Therefore, an analytical analysis based on both computational and experimental results has been introduced to obtain an overview about the physics, parameters, limits, and features of the HEMT.
The careful studying of the experimental results and the use of the introduced concentration coefficients (k1, k2, and kJ) help to deduce a normalization thickness (d*) and an intrinsic mobility (Ilo) for both bulk and HEMT devices. Also, the maximum mobility of the bulk device (/lbmax.) had been deduced, which takes place at a deduced optimum temperature (T hopt) depending on the bulk device parameters. The introduction of the bulk optimum temperature (T bopt) enables to determine the limiting values of the impurity as well as the phonon scattering coefficients for both bulk and HEMT devices.
Studying the gate voltage effect it was deduced that the operation ofHEMT is determined by limiting values of the effective gate voltage (VG2/a.) and the conduction-gate length voltage (2Vd. Also, it was shown that HEMT has a very small cut-in voltage.
The studying of the results obtained by the derived analytical expressions shows that the HEMT design procedures can be carried out in three major steps. The first is the internal composition ofHEMT parameters (Ilo,